MII 150-12 A4
MID 150-12 A4
MDI 150-12 A4
60
120
30
600
mJ
t d(on)
ns
mJ
t d(off)
ns
E on
40
t r
E on
80
t
E off
20
E off
400 t
V CE = 600V
V CE = 600V
20
V GE = ±15V
R G = 10
40
10
V GE = ±15V
R G = 10
200
T J = 125 ° C
T J = 125 ° C
t f
0
0
0
0
0
50
100
150
200 A
0
50
100
150
200 A
I C
Fig. 7 Typ. turn on energy and switching
times versus collector current
I C
Fig. 8 Typ. turn off energy and switching
times versus collector current
E on
50
mJ
40
V CE = 600V
V GE = ±15V
I C = 100A
T J = 125 ° C
t d(on)
E on
250
ns
200
t
20
mJ
E off 15
V CE = 600V
V GE = ±15V
I C = 100A
T J = 125 ° C
E off
t d(off)
1600
ns
1200
t
30
t r
150
10
800
20
100
10
50
5
400
0
0
0
t f
0
0
8
16
24
32
40
48
56
0
8
16
24
32
40
48
56
240
R G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
1
R G
Fig.10 Typ. turn off energy and switching
times versus gate resistor
I CM
A
200
160
R G = 10
K/W
0.1
Z thJC
0.01
diode
IGBT
120
T J = 125 ° C
80
V CEK < V CES
0.001
40
0
0.0001
0.00001
single pulse
150-12
0
200
400
600
800 1000 1200 V
0.00001 0.0001
0.001
0.01
0.1
s
1
V CE
Fig. 11 Reverse biased safe operating area
RBSOA
? 2000 IXYS All rights reserved
t
Fig. 12 Typ. transient thermal impedance
4-4
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